c top b e c back e b wbfbp-03b plastic-encapsulate transistors TK3906NND03 transistor description pnp epitaxial silicon transistor features epitaxial planar die construction complementary npn type available (tk3904nnd03) ultra-small surface mount package also available in lead free version application general purpose amplifier, switching for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking:3n c 3n b e maximum ratings ( t a =25 unless otherwise noted ) s y mbol paramete r v alue unit v cbo collecto r -base volta g e-40v v ceo collecto r -emitter volta g e -40 v v ebo emitte r -base volta g e -5 v i c collector current -continuous -200 ma p d power dissi p ation 150 m w r ? ja thermal resistance , junction to ambient 833 / w t j o p eratin g te m p erature 150 t stg stora g e and tem p erature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) paramete r s y mbol test conditions m in t yp max unit collecto r -base breakdown volta g e v ( br ) cbo i c =-10 a,i e =0 -40 v collecto r -emitter breakdown volta g e v ( br ) ceo i c =-1ma,i b =0 -40 v emitte r -base breakdown volta g e v ( br ) ebo i e =-10 a,i c =0 -5 v collector cut-off current i ce x v ce =-30v,v eb ( off ) =-3v -0.05 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe ( 1 ) v ce =-1v,i c =-0.1ma 60 h fe ( 2 ) v ce =-1v,i c =-1ma 80 h fe ( 3 ) v ce =-1v,i c =-10ma 100 300 h fe ( 4 ) v ce =-1v,i c =-50ma 60 dc current gain h fe ( 5 ) v ce =-1v,i c =-100ma 30 v ce ( sat ) 1 i c =-10ma,i b =-1ma -0.25 v collector-emitter saturation voltage v ce ( sat ) 2 i c =-50ma,i b =-5ma -0.4 v v be ( sat ) 1 i c =-10ma,i b =-1ma -0.65 -0.85 v base-emitter saturation voltage v be ( sat ) 2 i c =-50ma,i b =-5ma -0.95 v transition fre q uenc y f t v ce =-20v,i c =-10ma,f=100mhz 250 mhz wbfbp-03b (1.21.20.5) unit: mm 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector output capacitance c ob v cb =-5v,i e =0,f=1mhz 4.5 pf input capacitance c i b v eb =-0.5v,i c =0,f=1mhz 10 pf noise figure nf v ce =-5v,i c =0.1ma,f=1khz,r s =1k ? 4 db delay time t d 35 n s rise time t r v cc =-3v, v be(off) =0.5v,i c =-10ma , i b1 =-1ma 35 n s storage time t s 225 n s fall time t f v cc =-3v, i c =-10ma,i b1 = i b2 =- 1ma 75 n s 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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